Gate All around CNTFET based Ternary Content Addressable Memory
نویسندگان
چکیده
Abstract This paper proposes a design of gate all around CNTFET based ternary content addressable memory (TCAM). TCAM cell is designed and simulated in HSPICE using top gated (TG-CNTFET) & CNTTFET (GAA-CNTFET). Dual chirality technique used to i.e. different for n-type p-type which utilizes threshold voltages hence improve the performance. Comparative analysis has been done various parameters viz. Static noise margin (SNM), delay, power delay product (PDP). It found that GAA-CNTFET gives better SNM as compared TG-CNTFET TCAM, however less delay.
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ژورنال
عنوان ژورنال: ECS Journal of Solid State Science and Technology
سال: 2022
ISSN: ['2162-8769', '2162-8777']
DOI: https://doi.org/10.1149/2162-8777/ac77bc